Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Fabrication of DLPC LB films with MIS structure and I-V characteristics

MIS 구조의 DLPC LB 막의 제작과 전압-전류 특성

  • 이우선 (조선대학교 공대 전기공학과) ;
  • 정용호 (서강전문대학 열냉동과) ;
  • 정종상 (조선대학교 공대 전기공학과) ;
  • 손경춘 (조선대학교 공대 전기공학과) ;
  • 김상용 (아남 반도체) ;
  • 장의구 (중앙대학교 공대 전기공학과) ;
  • 이경섭 (동신대학교 공대 전기전자공학부)
  • Published : 1998.06.01
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Abstract

MLS capacitor with lipid ultra thin films were deposited by Langmuir-Blodgett (LB) method on the sillicon wafer. The current versus voltage and capacitance versus voltage relationships are depend on the applied voltage, electrode area and electrode materials. LB films deposited were made of L-$\alpha$-DLPC, the 1 layer's thickness of 35$\AA$ was measured by ellipsometer. And MLS capacitor with different electrode materials, the work function of these materials was investigated to increase the leakage current. The result indicated the lower leakage current and very high saturation value of capacitance was reached within 700-800 pF when the two electrode was Ag. And $\varepsilon$$_1$, $\varepsilon$$_2$ versus photon energy showed good film formation.

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