Proceedings of the Materials Research Society of Korea Conference (한국재료학회:학술대회논문집)
- 1998.11a
- /
- Pages.28-28
- /
- 1998
Improvement of Breakdown Voltage Characteristics in 4H-SiC Schottky Barrier Diode by $B^+$ Ion Implantation
$B^+$ 이온주입을 이용한 4H-SiC Schottky Barrier Diode 소자의 항복전압 향상 특성에 관한 연구
Abstract
Keywords