Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 1998.02a
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- Pages.114-115
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- 1998
Photoreflectance study of stress in GaAs/Si structure
- S. W. ppark (Deppt. of information & communications, K-JIST.) ;
- Kim, J.W. (Deppt. of information & communications, K-JIST.) ;
- pp.W.Yu (Deppt. of information & communications, K-JIST.)
- Published : 1998.02.01
Abstract
Photoreflectance (pR) measurement h have been employed to study the uniformity of G GaAs!Si 3" wafer. The PR shows the energy of l light and heavy hole even at room temperature. F From the observed energy of LH and HH, it can b be seen that the center of the wafer is more s stressed than the 뼈ge. On the basis of biaxial t tensile stress the higher and lower. transitions are a attributed to heavy and light hole respectively.vely.
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