Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 1998.02a
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- Pages.85-86
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- 1998
Tin Dioxide Thin Film Deposited by Ozone assisted MOCVD
- Bae, J.O. (Dept. of Materials Engineering Sung Kyun Kwan Univ.) ;
- Hyeun, S.W. (National Institute of Technology and Quality) ;
- Lee, S.U. (National Institute of Technology and Quality) ;
- Oho, K.H. (National Institute of Technology and Quality) ;
- Song, K.H. (National Institute of Technology and Quality) ;
- Park, J.I. (National Institute of Technology and Quality) ;
- Park, K.J. (National Institute of Technology and Quality) ;
- Yeom, G.Y. (Dept. of Materials Engineering Sung Kyun Kwan Univ.)
- Published : 1998.02.01
Abstract
투명전도막(TCO)인 산화주석막 (Tin oxide, TO)을 원료물질 tetramethyltin(TMT) 산소, 그리고 오존이 5mol% 함유된 산소 등의 다양한 가스 조합조건하에서 low ppressure-MOCVD법으로 증착하였다. TO 박막의 특성은 가스조합비 그리고 증착기판 온도 를 조절함으로서 변화시킬 수 있는데 특히 기판온도에 크게 의존한다. 증착된 박막은 XRD,
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