Proceedings of the Korea Association of Crystal Growth Conference (한국결정성장학회:학술대회논문집)
- 1998.09a
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- Pages.85-90
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- 1998
APPLICATIN OF $CF_4$ PLASMA ETCHING TO $Ta_{0.5}Al_{0.5}$ ALLOY THIN FILM
- Shin, Seung-Ho (Dept of Ceramic Engineering, Hanyang Univ.) ;
- Na, Kyung-Won (Samsung Advanced Institute of Technology) ;
- Kim, Seong-Jin (Samsung Advanced Institute of Technology) ;
- Chung, Yong-Sun (Ceramic Processing Research Center (CPRC), Hanyang Univ.) ;
- Auh, Keun-Ho (Ceramic Processing Research Center (CPRC), Hanyang Univ.)
- Published : 1998.09.01
Abstract
Reactive ion etching (RIE) of Ta-Al alloy thin film and SiO2 thin films was observed during the etching with the CF4 gas and the could be used effectively to etch the Ta-Al alloy thin film. The etching rate of the thin film at a Ta content of 50 mol% was about 67
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