Deposition of GaN by Chloride VPE and its Thermodynamic Analysis

  • Park, Chinho (Yeungnam University, School of Chemical Engineering & Technology) ;
  • Deoksun Yoon (Yeungnam University, School of Chemical Engineering & Technology) ;
  • Lee, Soonae (Yeungnam University, School of Chemical Engineering & Technology) ;
  • Shin, Moo-Whan (Myongji University, Department of Inorganic Materials Engineering)
  • Published : 1998.09.01

Abstract

The GaN thick films were deposited on sapphire substrates by the chloride vapor phase epitaxy (CVPE) technique suing the GaCl3-NH3-N2 chemistry. Thermodynamic simulations were carried out to predict the optimum process windows, and the results were compared with the experiments. A large difference in the growth temperature was observed between the calculation an the experiment, and it indicated that the growth of GaN by the CVPE technique is kinetically limited.

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