Epitaxial Growth of Rare-earth Ion Doped $CaF_2$ layers by MBE

  • Ko, J.N. (Institute for Materials Research, Tohoku University) ;
  • Chen, Y. (Institute for Materials Research, Tohoku University) ;
  • Fukuda, T. (Institute for Materials Research, Tohoku University)
  • Published : 1998.09.01

Abstract

The rare-earth ions (R3+, R=Nd, Er) doped CaF2 layers have been grown on CaF2(111) substrate by molecular beam epitaxy. The epitaxial relationship and the crystallinity of CaF2:R3+ layers depending on the concentration of R3+ were studied by reflection high-energy electron diffraction (RHEED). In aspect of application as buffer layer in semiconductor-related hybrid structure, the lattice displacement between CaF2:R3+ layers and CaF2(111) substrate was investigated by X-ray rocking curve analysis.

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