한국결정성장학회:학술대회논문집 (Proceedings of the Korea Association of Crystal Growth Conference)
- 한국결정성장학회 1998년도 PROCEEDINGS OF THE 14TH KACG TECHNICAL MEETING AND THE 5TH KOREA-JAPAN EMGS (ELECTRONIC MATERIALS GROWTH SYMPOSIUM)
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- Pages.169-172
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- 1998
Measurement of Velocity and Temperature Field at the Low Prand시 Number Melt Model of the CZ Crystal Growth
- Kim, Min-Cheol (School of Materials Science and Engineering, Seoul National University) ;
- Lee, Sang-Ho (School of Materials Science and Engineering, Seoul National University) ;
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Yi, Kyung-Woo
(School of Materials Science and Engineering, Seoul National University)
- 발행 : 1998.06.01
초록
A phyaical model of the Czochralski method for silicon single crystals is designed to measure the change of velocities and temperature profilles in the melt. Wood's metal(Bi 50%, Pb 26.7%, Sn 13.3%, Cd 10%, m.p. 70℃) is used to simulate the silicon melt in the crucible. To measure the local velocity change, electromagnetic probe is adopted as a velocity sensor. The output voltage of the sensor shows linear relationship to the velocity of the melt.
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