한국결정성장학회:학술대회논문집 (Proceedings of the Korea Association of Crystal Growth Conference)
- 한국결정성장학회 1998년도 PROCEEDINGS OF THE 14TH KACG TECHNICAL MEETING AND THE 5TH KOREA-JAPAN EMGS (ELECTRONIC MATERIALS GROWTH SYMPOSIUM)
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- Pages.77-79
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- 1998
Fabrication of transition metal doped sapphire single crystal by high temperature and pressure acceleration method
- Park, Eui-Seok (National Institute of ceramic Technology {{}}) ;
- Jung, Choong-Ho (National Institute of ceramic Technology) ;
- Kim, Moo-Kyung (National Institute of ceramic Technology) ;
- Kim, Yoo-taek (National Institute of ceramic Technology) ;
- Hong, Jung-Yoo (Division of Advanced Industrial Engineering, Kyonggi University)
- 발행 : 1998.06.01
초록
Metallic chromium was diffused in the{0001},{1120} white sapphires which were grown by the Verneuil method to enhance the physical properties of the sapphires. Chromium metal vapour pressure and {{{{ { N}_{2 } }}}} pressure were kept by {{{{ { 1
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