한국결정성장학회:학술대회논문집 (Proceedings of the Korea Association of Crystal Growth Conference)
- 한국결정성장학회 1998년도 PROCEEDINGS OF THE 14TH KACG TECHNICAL MEETING AND THE 5TH KOREA-JAPAN EMGS (ELECTRONIC MATERIALS GROWTH SYMPOSIUM)
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- Pages.49-54
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- 1998
Real-time Spectroscopic Ellipsometry studies of the Effect of Preparation Parameters on the Coalescence Characteristics of Microwave-PECVD Diamond Films
- Hong, Byungyou (Sungkyunkwan university School of Electrical and Computer Engineering)
- 발행 : 1998.06.01
초록
The growth of diamond films in plasma enhanced chemical vapor deposition(PECVD) processes requires high substrate temperatures and gas pressures, as well as high-power excitation of the gas source. Thus determining the substrate temperature in this severe environment is a challenge. The issue is a critical one since substrate temperature is a key parameter for understanding and optimizing diamond film growth. The precise Si substrate temperature calibration based on rapid-scanning spectroscopic ellipsometry have been developed and utilized. Using the true temperature of the top 200
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