Transprt Phenomena in Bulk Crystal Growth Processes

Transport phenomena paly an inmportant role in bulk crystal growth processes. During crystal growth, the control of the growth front and the dopant concentration is crucial to crystal quality. The growth feasibility in thus determined by the heat transfer controlling the interface convexity and by the mass transfer controlling the constitutional supercooling. Through numerical modeling, a thorough understanding of the growth processes is possible, which in turn is a key to process improvenment. In this paper, we will summarize some work dine in my laboratory, both numerical and experimental, to illustrate the importance of understanding the transport phenomena during crystal growth processes.