Proceedings of the KIPE Conference (전력전자학회:학술대회논문집)

The Korean Institute of Power Electronics (전력전자학회)
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SOFT RECOVERY CHARACTERISTICS OF POWER DIODE BY PROTON IRRADIATION

  • Zhang Changli (Xi'an Power Electronic Res. Institute) ;
  • Chen Zhiming (Xi'an University of Technology) ;
  • Park, J.M. (Korea Electrotechnology Research Institute) ;
  • Min, W.G. (Korea Electrotechnology Research Institute) ;
  • Kim, S.C. (Korea Electrotechnology Research Institute) ;
  • Kim, N.K. (Korea Electrotechnology Research Institute) ;
  • Kim, E.D. (Korea Electrotechnology Research Institute)
  • Published : 1998.10.01
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Abstract

The soft reverse recovery characteristics of P-I-N power diodes by different lifetime killer were compared in this paper. It was concluded that the best local lifetime control at N- base was achieved through the optimization of penetrated depth into the wafer by 5 MeV proton irradiation, resulting in significant soft recovery performance in our study. The results of 5∼12 MeV electron irradiation and platinum diffusion were also discussed here.

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