란탄니아 첨가량에 따른 Pr계 ZnO 바리스터의 전기적 특성

The Electrical Characteristics of Pr-Based ZnO Varistors With Lanthania Additives

  • 이외천 (동의대학교 전기공학과) ;
  • 박춘현 (동의대학교 전기공학과) ;
  • 남춘우 (동의대학교 전기공학과)
  • 발행 : 1998.07.20

초록

The effects of lanthania on the microstructure and electrical characteristics of Pr-based ZnO varistors were investigated. The average grain size was increased in the range of 21.9$\sim$56.3${\mu}m$ with increasing lanthania content(0.0$\sim$2.0mol%). La was largely segregated at the grain boundary. As lanthania content increases, threshold voltage and nonlinear coefficient were decreased and leakage current was increased. In particular 2.0mol% lanthania-added varistor exhibited low threshold, voltage 17.0V/mm and nonlinear coefficient of around 6. Based on these results, this varistor can be said to be used as low-voltage varistor, if nonlinear coefficient is somewhat improved forward.

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