대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1998년도 하계학술대회 논문집 E
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- Pages.1797-1799
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- 1998
플라즈마 이온주입에서 쉬스 동역학에 관한 연구
Study of Sheath Dynamics in Plasma Source Ion Implantation
- 김광훈 (한국전기연구소 전기물리연구팀) ;
- 조주현 (한국전기연구소 전기물리연구팀) ;
- 최영욱 (한국전기연구소 전기물리연구팀) ;
- 이홍식 (한국전기연구소 전기물리연구팀) ;
- 임근희 (한국전기연구소 전기물리연구팀) ;
- Kim, G.H. (Appled Electrophysics Team. KERI) ;
- Cho, C.H. (Appled Electrophysics Team. KERI) ;
- Choi, Y.W. (Appled Electrophysics Team. KERI) ;
- Lee, H.S. (Appled Electrophysics Team. KERI) ;
- Rim, G.H. (Appled Electrophysics Team. KERI) ;
- Nikiforov, S. (Appled Electrophysics Team. KERI)
- 발행 : 1998.07.20
초록
Plasma source ion implantation(PSII) is a non-line-of-sight technique for surface modification of materials which is effective for non-planar targets. A apparatus of 30kV PSII is established and plasma characteristics are diagnosed by using a Langmuir probe. A spherical target is immersed in argon plasma and biased negatively by a series of high voltage pulses. Sheath evolution is measured by using a Langmuir probe and compared with the result of computer simulations.
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