Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Study of Sheath Dynamics in Plasma Source Ion Implantation

플라즈마 이온주입에서 쉬스 동역학에 관한 연구

  • Kim, G.H. (Appled Electrophysics Team. KERI) ;
  • Cho, C.H. (Appled Electrophysics Team. KERI) ;
  • Choi, Y.W. (Appled Electrophysics Team. KERI) ;
  • Lee, H.S. (Appled Electrophysics Team. KERI) ;
  • Rim, G.H. (Appled Electrophysics Team. KERI) ;
  • Nikiforov, S. (Appled Electrophysics Team. KERI)
  • 김광훈 (한국전기연구소 전기물리연구팀) ;
  • 조주현 (한국전기연구소 전기물리연구팀) ;
  • 최영욱 (한국전기연구소 전기물리연구팀) ;
  • 이홍식 (한국전기연구소 전기물리연구팀) ;
  • 임근희 (한국전기연구소 전기물리연구팀) ;
  • Published : 1998.07.20
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Abstract

Plasma source ion implantation(PSII) is a non-line-of-sight technique for surface modification of materials which is effective for non-planar targets. A apparatus of 30kV PSII is established and plasma characteristics are diagnosed by using a Langmuir probe. A spherical target is immersed in argon plasma and biased negatively by a series of high voltage pulses. Sheath evolution is measured by using a Langmuir probe and compared with the result of computer simulations.

Keywords