대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1998년도 하계학술대회 논문집 E
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- Pages.1714-1716
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- 1998
고전계 하에서의 실리콘 연면방전특성 연구
A study on the Characteristics of Flashover on the Silicon in High Field
- Kim, Jung-Dal (Kyungnam Univ) ;
- Jung, Jang-Gun (Kyungnam Univ) ;
- Joo, Sung-Cheol (Kyungnam Univ) ;
- Chang, Gi-Hyuk (Kyungnam Univ) ;
- Lee, Duck-Jin (Kyungnam Univ)
- 발행 : 1998.07.20
초록
The surface breakdown problem has plagued the development of high solid state for more than 30 years, but the physical basis for this flashover phenomenon is still not understood. The only way to overcome those problem and has a workable compact solid state switch is to passivate the surface by a solid state dielectric material, to coating/encapsulation the device in an insulting medium. In this paper, characteristics of flashover in high field Si-dielectric system behavior under high electric field is discussed.
키워드