Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Pspice ABM MOSFET Model for Conducted EMI Analysis

전도 전자파 장애 분석을 위한 Pspice ABM MOSFET 모델

  • Lee, J.H. (School of Electrical Engineering. Seoul National Univ) ;
  • Lee, D.Y. (School of Electrical Engineering. Seoul National Univ) ;
  • Cho, B.H. (School of Electrical Engineering. Seoul National Univ)
  • Published : 1998.07.20
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Abstract

For an analysis and simulation of the conducted EMI of switching converters, an accurate simulation model for MOSFET is needed. This paper presents a new modeling approach, which incorporates DC output characteristics and AC dynamics especially the parasitic capacitances. It uses Pspice ABM(Analog Behavioral Model) and the MOSFET parameters can be obtained from the Data sheet in the frequency range of interest for EMI analysis. The model verified with an experimental setup and the EMI for a test converter is analyzed with respect to the MOSFET switching waveforms.

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