헬리컬 공명 플라즈마의 특성

The characteristics of helical resonator plasma

  • 장상훈 (경북대학교 전기공학과) ;
  • 김태현 (경북대학교 전기공학과) ;
  • 김문영 (경북대학교 전기공학과) ;
  • 태흥식 (경북대학교 전기공학과)
  • Jang, Sang-Hun (Dep. of Electrical Eng. Kyungpook National University) ;
  • Kim, Tae-Hyun (Dep. of Electrical Eng. Kyungpook National University) ;
  • Kim, Moon-Young (Dep. of Electrical Eng. Kyungpook National University) ;
  • Tae, Heung-Sik (Dep. of Electrical Eng. Kyungpook National University)
  • 발행 : 1997.11.29

초록

An experimental helical resonator plasma system that can be applied to the next generation semiconductor processing was fabricated and its characteristics was investigated. Helical resonator plasma can operate both in a capacitive and an inductive mode. Such sources will produce an extended plasma for the capacitive mode and a plasma concentrated in the resonator for the inductive mode. Plasma parameters were measured with Double Langmuir Probes. Plasma densities of $10^{11}{\sim}10^{12}cm^{-3}$ were produced in argon for pressure in the $2{\sim}120\;mTorr$ range. From the results, we conclude that helical resonator plasma can be applied to the next generation semiconductor processing.

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