The characteristics of helical resonator plasma

헬리컬 공명 플라즈마의 특성

  • Jang, Sang-Hun (Dep. of Electrical Eng. Kyungpook National University) ;
  • Kim, Tae-Hyun (Dep. of Electrical Eng. Kyungpook National University) ;
  • Kim, Moon-Young (Dep. of Electrical Eng. Kyungpook National University) ;
  • Tae, Heung-Sik (Dep. of Electrical Eng. Kyungpook National University)
  • 장상훈 (경북대학교 전기공학과) ;
  • 김태현 (경북대학교 전기공학과) ;
  • 김문영 (경북대학교 전기공학과) ;
  • 태흥식 (경북대학교 전기공학과)
  • Published : 1997.11.29

Abstract

An experimental helical resonator plasma system that can be applied to the next generation semiconductor processing was fabricated and its characteristics was investigated. Helical resonator plasma can operate both in a capacitive and an inductive mode. Such sources will produce an extended plasma for the capacitive mode and a plasma concentrated in the resonator for the inductive mode. Plasma parameters were measured with Double Langmuir Probes. Plasma densities of $10^{11}{\sim}10^{12}cm^{-3}$ were produced in argon for pressure in the $2{\sim}120\;mTorr$ range. From the results, we conclude that helical resonator plasma can be applied to the next generation semiconductor processing.

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