Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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The Characteristics of GaAsP/GaP Epitaxial Layer on the epitaxial growth temperature

성장 온도에 따른 GaAsP/GaP Epitaxial Layer의 특성

  • Lee, Eun-Cheol (Department of Electrical Engineering, Kunsan National University) ;
  • Ra, Yong-Choon (Department of Electrical Engineering, Kunsan National University) ;
  • Eom, Moon-Jong (Department of Electrical Engineering, Kunsan National University) ;
  • Lee, Cheol-Jin (Department of Electrical Engineering, Kunsan National University) ;
  • Sung, Man-Young (Department of Electrical Engineering, Korea University)
  • Published : 1997.11.29
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Abstract

We have studied the properties of $GaAs_{1-x}P_x$ epitaxial films on the GaP using VPE method by CVD. The surface carrier concentration and PL power increased with increasing the epitaxial temperature while PL wave length decreased. The Power out of the LED with $GaAs_{1-x}P_x$/GaP structure decreased with increasing the epitaxial temperature while the forward voltage of the LED increased. Specially, The LED of $GaAs_{1-x}P_x$/GaP structure represents good electrical and optical properties when the $GaAs_{1-x}P_x$ layer was epitaxially grown at $810^{\circ}C$.

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