Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1997.11a
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- Pages.276-278
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- 1997
GaN Dry Etching Characteristics using a planar Inductively coupled plasma
평판형 유도 결합 플라즈마틀 이용한 GaN 건식 식각 특성
- Kim, Moon-Young (Dep. of Electrical Eng. Kyungpook National University) ;
- Kim, Tae-Hyun (Dep. of Electrical Eng. Kyungpook National University) ;
- Jang, Sang-Hun (Dep. of Electrical Eng. Kyungpook National University) ;
- Tae, Heung-Sik (Dep. of Electrical Eng. Kyungpook National University)
- Published : 1997.11.29
Abstract
The reliable etching process is one of the essential steps in fabricating GaN based-device. High etch rate is needed to obtain a deeply etched structure and perfect anisotropic etched facet is needed to obtain lasing profile. In the research, therefore, we had proposed a planar inductively coupled plasma etcher (Planar ICP Etcher) as a high density plasma source, and studied the etching mechanism using the
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