Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Field emission property of the nitrogen doped diamond-like carbon film prepared by filtered cathodic vacuum arc technique

진공아크방전으로 제작된 다이아몬드상 탄소 박막의 질소 도우핑에 따른 전계 방출 특성

  • Choi, M.S. (Dept. of Electrical Eng., Myongji University) ;
  • Kim, Y.S. (Dept. of Electrical Eng., Myongji University) ;
  • Lee, H.S. (Dept. of Electrical Eng., Hanyang University) ;
  • Park, J.S. (Dept. of Electrical Eng., Hanyang University) ;
  • Jeon, D. (Dept. of Physics, Myongji University) ;
  • Kim, J.K. (Samsung Electronics Co., Production Engineering Center)
  • 최만섭 (명지대학교 공과대학 전기공학과) ;
  • 김용상 (명지대학교 공과대학 전기공학과) ;
  • 이해승 (한양대학교 공과대학 전기공학과) ;
  • 박진석 (한양대학교 공과대학 전기공학과) ;
  • 전동렬 (명지대학교 이과대학 물리학과) ;
  • 김종국 (삼성전자(주) 생산기술센터)
  • Published : 1997.11.29
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Abstract

We fabricated the conventional silicon tips coated with a diamond-like carbon (DLC) film. The DLC films are prepared by the filtered cathodic vacuum arc (FCVA) technique. With increasing nitrogen content in DLC film, the work function($\phi$) and the turn-on voltage decrease and the emission current increases. This phenomenon is due to the fact that the Fermi-level moves to the conduction band by increasing nitrogen doping concentration. We have tested on the stability of the DLC film coated silicon tip during 2 hours at 500V.

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