Microwave Plasma CVD에 의한 Diamond 박막의 성장

The Study on Growls of diamond thin films Synthesized by Microwave Plasma Enhanced Chemical Vapor Deposition

  • 이병수 (인하대학교 공대 전기공학과) ;
  • 이상희 (인하대학교 공대 전기공학과) ;
  • 박구범 (유한전문대학 전기과) ;
  • 박종관 (유한전문대학 정보통신과) ;
  • 박상현 (경남대학교 공대 전기공학과) ;
  • 유도현 (안산공업전문대학 전기과) ;
  • 이덕출 (인하대학교 공대 전기공학과)
  • 발행 : 1997.11.01

초록

Diamond thin films were deposited on P-type(100) Si wafers using MPECVD. Prior to deposition, mechanical scretching was done to improve density of nucleation sites with diamond paste of 0.25${\mu}{\textrm}{m}$ size. Diamond films were deposited under the following conditions : methane concentration of 0.5~5%, oxygen concentration of 0~70%, process pressure of 70Torr, process temperature of 900~95$0^{\circ}C$, and deposition time 5hrs. The changes of the morphology and the growth rates of the deposits with the experimental conditions are expriend by Scanning Electron Microscopy. Raman Spectroscopy and X-ray Diffraction method.

키워드