Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1997.11a
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- Pages.102-105
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- 1997
Thickness Dependence of Stress Currents in Silicon Oxide
실리콘 산화막에서 스트레스 전류의 두께 의존성
Abstract
The thickness dependence of stress voltage oxide currents has been measured in oxides with thicknesses between 10nm and 80nm. The oxide currents were shown to be composed of stress current and transient current. The stress current was caused by trap assited tunneling through the oxide. The transient current was caused by the tunneling charging and discharging of the trap in the interfaces. The stress current was used to estimate to the limitations on oxide thicknesses. The transient current was used to the data retention in memory devices.
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