한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 1997년도 추계학술대회 논문집
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- Pages.473-476
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- 1997
집속된 아르곤 이온 레이저에 의한 실리콘의 미세가공 및 평가
Microprocess of silicon using focused Ar$^+$ llaser and estimates
- Cheong, Jae-Hoon (Department of Electrical Engineering,Inha University) ;
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Lee, Cheon
(Department of Electrical Engineering,Inha University) ;
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Hwang, Kyoung-Hyun
(Korea Institute of Machinery & Material)
- 발행 : 1997.11.01
초록
Focused Ar ion laser beam can be utilized to fabricate microstructures on silicon substrate as well as other materials(e.g. such as ceramic). The laser using in this study is an argon ion laser with maximum power of 6 W, wavelength of 514 nm. This laser beam is focused by objectives with a high numerical aperture, a long working distance. We have achieved line width about 1
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