한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 1997년도 추계학술대회 논문집
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- Pages.44-47
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- 1997
HVPE에 의해 성장된 Zn가 첨가된 GaN의 특성
The properties of Zn doped GaN grown by HVPE
초록
In spite of the addtion of Zn, a high quality of Zn-doped GaN film were prepared. The growth rates of Zn-doped GaN films were varied from 0.14
키워드