한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

MCS-BE법을 이용한 SiH$_4$가스 프라즈마중의 전자에너지분포함수와 수송특성해석

Analysis of Electron Energy Distribution Function and Transport Characteristic in SiH$_4$ Gas Plasma by MCS-BE Method

  • 이형윤 (동국대학교 전기공학과) ;
  • 하성철 (동국대학교 전기공학과) ;
  • 유회영 (대림전문대 전자공학과) ;
  • 김상남 (시립인천전문대 전기공학과) ;
  • 임상원 (동국대학교 전기공학과) ;
  • 문기석 (동국대학교 전기공학과)
  • 발행 : 1997.04.01
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초록

This paper describes the electron transport characteristic in SiH$_4$ gas calculated for range of E/N values from 0.5~300(Td) by the Monte Calro simulation and Boltzmann equation method using a set of electron collision cross sections determined by the authors and the values of electron swarm parameters are obtained for TOF method. The results gained that the value of an electron swarm parameter such as the electron drift velocity, the electron ionization coefficients longitudinal and transverse diffusion coefficients, characteristics energy agree with thee experimental and theoretical for a range of E/N. The electron energy distributions function were analysed in monosilane at EN : 30, 50(Td) for a case of equilibrium region in the mean electron energy. The validity of the results obtained has been confirmed by a TOF method.

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