Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Ferroelectric Properties of Hetero-Junction SrBi$_2Ta_2O_9$/Pb(Zr,Ti)O$_3$

이종접합 SrBi$_2Ta_2O_9$/Pb(Zr,Ti)O$_3$박막 케패시터의 강유전 특성

  • 이광배 (상지대학교 이공과대학 물리학과) ;
  • 김종탁 (상지대학교 병설전문대학 전자과)
  • Published : 1997.04.01
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Abstract

We have investigated the ferroelectric properties of multi-layered SrBi$_2$Ta$_2$$O_{9}$Pb(Zr,Ti)O$_3$, SBT/PZT, thin film capacitors. Specimens were prepared onto Pt-coated Si wafer by sol-gel method. Ferroelectric properties of these finns could be obtained only for thin SBT layers below 50nm in thickness. The values of dielectric constant and remnant polarization depend mainly on the thickness of SBT layer, which arises from the paraelectric interface layer between SBT and PZT due to the thermal diffusion of Pb. The value of remnant poarization of PZT/SBT is greater than that of SBT, and the plarization fatigue behaviors of PZT/SBT/Pt capacitors are somewhat improved as compared with those of PZT/Pt.t.

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