한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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- Pages.62-65
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- 1997
반응성 스퍼터링에 의한 InN 박막 제작
Preparation of InN thin films by reactive sputtering
초록
Indium nitride thin films were deposited on Si(100) substrates by reactive sputtering method. The metallic indium target was sputtered by nitrogen gas with rf sputtering equipment. The surface morphology and cross-section of the InN thin films were investigated by scanning electron microscopy. The crystal orientations were investigated by X-ray diffraction and the Hall effect were measured with van der Pauw method. The indium nitride thin film showed high Hall mobility(215
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