MICROSTRUCTURES AND ATOMIC BEHAVIORS OF SEVERAL METAL ELECTRODE SYSTEMS ON SiO_2$/Si ANNEALED IN $O_2 AND N_2$ AMBIENTS : Pt(POLY-Si, TiN, AND Ti), Ru/POLY-Si, AND Ir/(POLY-Si AND TiN)

• Kim, Cha-Yeon (LG corporate Institute of Technology) ;
• Kwon, Hyun-Ja (LG corporate Institute of Technology) ;
• Kim, Hyun-Ha (LG corporate Institute of Technology) ;
• Lee, Jeong-Soo (LG corporate Institute of Technology) ;
• Jeon, Yoo-Chan (LG Semicon Co, Ltd.) ;
• Whang, Chung-Nam (Department of Physics, Yonsei University)

• Published : 1997.02.01

• PDF