한국결정성장학회:학술대회논문집 (Proceedings of the Korea Association of Crystal Growth Conference)
- 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
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- Pages.219-222
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- 1997
Optical Dark Field Imaging for Characterization of Semiconductors
- Ogawa, Tomoya (Department of Physics, Gakushin University) ;
- Kissinger, Gudrun (Institute for Semiconductor Physics, Frankfurt (Order), Germany) ;
- Sakai, Kazufumi (Department of Math. & Phys., The National Defence Academy, Yokosuka City, 239, Japan)
- 발행 : 1997.06.01
초록
The principle of dark field imaging is comprehensively discussed using real images of dislocations, stacking faults and gettering phenomena due to defects obtained by Cz Si wafers and LEC semi-insulating GaAs crystals. Resulution of dark field imaging is improved by Fourier transformation of Fraunhofer diffraction pattern obtained at an out-of focusing position of an objective lens.
키워드