한국결정성장학회:학술대회논문집 (Proceedings of the Korea Association of Crystal Growth Conference)
- 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
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- Pages.207-209
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- 1997
Oxygen Transport in Highly Boron Doped Silicon Melt
- Terashima, K. (Silicon Melt Advanced Project, Shonan Institute of Technology) ;
- Abe, K. (Silicon Melt Advanced Project, Shonan Institute of Technology) ;
- Maeda, S. (Silicon Melt Advanced Project, Shonan Institute of Technology) ;
- Nakanishi, H. (Silicon Melt Advanced Project, Shonan Institute of Technology)
- 발행 : 1997.06.01
초록
Influences of boron addition on the oxygen solubiligy in silicon melt and the amount of evaporation loss from the melt surface were investigated. It has been found the oxygen concentration increases from 2
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