Growth and Properties of the $Cd_{1-x}Zn_xS$ Thin Film by Co-evaporation

동시증착에 의한 $Cd_{1-x}Zn_xS$ 박막제작 및 특성에 관한 연구

  • Published : 1997.07.21

Abstract

In this paper, structural, optical and electrical properties of $Cd_{1-x}Zn_xS$ thin films prepared by co-evaporation method were studied. The crystal structure of $Cd_{1-x}Zn_xS$ films deposited at a substrate temperature of $150^{\circ}C$ was hexagonal with the c axis aligned perpendicular to the substrate. As increasing composition parameter x, the intensity of (002) peak decreased, which means poor crystalline and decreasing of preferential orientation. The optical bandgap of $Cd_{1-x}Zn_xS$ films varies from 2.41eV for CdS to 3.48eV for ZnS with x. The resistivity of the $Cd_{1-x}Zn_xS$ films increased with x.

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