대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
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레이저 CVD법에 의해 퇴적된 OXYNITRIDE막의 기판세정법에 따른 특성에 관한 연구

A study on the electrical properties by the effect of wafer cleaning of OXYNITRIDE films deposited by Laser CVD

  • 김창덕 (고려 대학교 대학원 전기공학과) ;
  • 이상권 (고려 대학교 대학원 전기공학과) ;
  • 김태훈 (고려 대학교 대학원 전기공학과) ;
  • 성영권 (고려 대학교 대학원 전기공학과)
  • Kim, C.D. (Dept. of Electrical Engineering, Korea Univ.) ;
  • Lee, S.K. (Dept. of Electrical Engineering, Korea Univ.) ;
  • Kim, T.H. (Dept. of Electrical Engineering, Korea Univ.) ;
  • Sung, Y.K. (Dept. of Electrical Engineering, Korea Univ.)
  • 발행 : 1997.07.21
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초록

The oxynitride films were photo-chemically deposited by ArF(wave length: 193nm) excimer laser CVD used to excite and dissociate gas phases $Si_2H_6$, $N_2O$, and $NH_3$ molecules. We obtained various electrical properties when we varied wafer cleaning procedures consisted of a conventional RCA and a two-dip step[4]. The results show the films have low leakage currents and good TZDB properties. We also analyzed the composition of the oxynitride films which have homogeneous composition throughout the film.

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