플레나 및 이방성 에칭 구조를 갖는 실리콘 p-i-n 광 스위치

Optically-Triggered Silicon P-I-N Switches with Planar and Anistropically-Etched Structures

Two kinds of optically-triggered p-i-n switches with planar and V-groove structures have been fabricated with gold-doped silicon. The V-groove device exhibits a higher threshold voltage and is more sensitive to light. The minimum optical power indicates that a certain minimum illumination is required to optically turn on the silicon p-i-n devices.