Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1997.07d
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- Pages.1261-1263
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- 1997
Optically-Triggered Silicon P-I-N Switches with Planar and Anistropically-Etched Structures
플레나 및 이방성 에칭 구조를 갖는 실리콘 p-i-n 광 스위치
- Min, Nam-Ki (Korea University) ;
- Lee, Seong-Jae (Daelim College) ;
- Henderson, H.T. (University of Cincinnati)
- Published : 1997.07.21
Abstract
Two kinds of optically-triggered p-i-n switches with planar and V-groove structures have been fabricated with gold-doped silicon. The V-groove device exhibits a higher threshold voltage and is more sensitive to light. The minimum optical power indicates that a certain minimum illumination is required to optically turn on the silicon p-i-n devices.
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