Dielectric Properties and Leakage Current Characteristics of PZT Heterolayered Thin Films by the Sol-Gel Method

Sol-Gel 법으로 제작한 PZT이종층 박막의 운전 및 누설전류 특성

  • 심광택 (광운대학교 전자재료공학과) ;
  • 이영희 (광운대학교 전자재료공학과) ;
  • 이성갑 (서남대학교 전자공학과) ;
  • 배선기 (시립 인천대학교 전기공학과)
  • Published : 1997.07.21

Abstract

In this work, PZT(20/80)/(80/20) heterolayered thin film that has the tetragonal and rhombohedral structure was fabricated by Sol-Gel method spin-coated on the Pt/Ti/$SiO_2$/Si substrate by turns. The thickness of PZT-1 film obtained by six-times of drying/sintering process was about 480[nm]. This procedure was repeated several times to form PZT heterolayered thim film. PZT-5 thin films with top layer of tetragonal PZT(20/80) thin film showed dense grain structure and PZT-6 thin film with top layer of rhombohedral PZT(80/20) thin film showed the microstructure without rosette. Dielectric constant increased with increasing the number of coatings, and it was about 13S5 at PZT-6 thin film. Dielectric loss was not depend on the number of coatings.

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