Parallel Operation of a Pair of SITs in order to raise the High Frequency and Power Half-Bridge Inverter

고주파 및 고전력 인버터 적용을 위한 Half-Bridge SIT의 병렬운전 특성고찰

The SIT, a Static Induction Transistor, is a semiconductor switch that is also called the power junction field-effect transistor (power JFET). Its characteristics are similar to a MOSFET except that its power level is higher and its maximum frequency of operation is lower. The normal method to protect against internal circuit transients of the form of di/dt or dv/dt is the use of snubber circuits. However, the limits of di/dt and dv/dt are high enough for the SIT that it is possible to operate without snubber circuits. SITs can be connected in parallel in order to cope with higher load currents that the value of an individual device rating. The purpose of this study is to investigate the parallel operation of SITs. In this experiment, we used a half-bridge inverter, the output of inverter is up to almost 1MHz and 2kW. Experimental results show that the operation of parallel connected SITs are facilitated individually good current sharing. The reason is the positive temperature coefficient of resistance of the SIT.