Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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OPTICAL PROPERTIES OF GaSe SINGSE CRYESTALS by BRIDGMAN TECHNIQUE

Bridgman 방법 의해서 성장된 GaSe 단결정의 광학적인 특성

  • 이우선 (조선대학교 전기공학과) ;
  • 정용호 (조선대학교 전기공학과) ;
  • 김남오 (조선대학교 전기공학과) ;
  • 김형곤 (조선대병설공업전문대 전기과)
  • Published : 1996.11.16
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Abstract

The energy gap of GaSe:$Er^{3+}$(5mol%) single crystals grown by the Bridgman technique displaced a direct energy gap at 1.79 eV and an indirect energy gap at 1.62 eV at $300^{\circ}K$ with the addition of Erbium. Also, an impurity optical absorption peak was found to have occurred at $6505\;cm^{-1}$. The peak identified the origin of the electronic transitions between the energy levels of $Er^{3+}$ ions when the addition of dopant.

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