Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Dielectric Properties of BaTi $O_3$ by Additive Material

첨가제에 의한 BaTi $O_3$의 유전특성

  • 홍경진 (전남대학교 전기공학과) ;
  • 정우성 (전남대학교 전기공학과) ;
  • 민용기 (광주대학교 전자공학과) ;
  • 김태성 (전남대학교 전기공학과)
  • Published : 1996.11.01
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Abstract

The ceramic dielectrics were fabricated by mixing of Mn $O_2$ and ZnO at (B $a_{0.85}$ $Ca_{0.15}$)Ti $O_3$ and studied for dielectric relaxation characteristics. The dielectric relaxation time was increased by space charge polarization of palaelectric layer at the low temperature and frequency but it was decreased by Interface polarization at the high temperature and frequency. The remnant polarization and coercive field of ceramic dielectrics was decreased by rising temperature.ure.

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