Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Propcrties of Low Delectric Constant SiOF Films Formed by ECR CVD

ECR CVD 방법에 의해 증착된 저유전율 SiOF 박막특성

  • 장원익 (한국전자통신연구소 반도체연구단) ;
  • 강승열 (한국전자통신연구소 반도체연구단) ;
  • 백종태 (한국전자통신연구소 반도체연구단) ;
  • 유형준 (한국전자통신연구소 반도체연구단)
  • Published : 1996.11.01
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Abstract

Low dielectric constant fluorinated oxide (SiOF) films were deposited using SiF$_4$/O$_2$/SiH$_4$mixtures by electron cyclotron resonance chemical vapor deposition (ECR CVD). Chemical composition of SiOF films was investigated by Fourier transform infrared spectroscopy (FT-lR). The fluorine content in the SiOF film observed by X-ray photoelectron spectroscopy (XPS). The dielectric constant decreased with increasing of the SiF$_4$ flow rate about 8sccm. The SiOF film, deposited with SiF$_4$=8 sccm, exhibited a F content of 5 atomic % and a relative dielectric constant 3.45. For evaluating SiOF films stability, humidity tests were performed.

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