반응성 이온 식각후 AlCu막의 부식현상

The corrosion phenomena of AlCu films after reactive ion etching

Cl-based gas chemistry is generally used to etching for Al alloy metallization. After the etching of Al alloy with Cl-based gas plasma, residual chlorine on Al alloy reacts with $H_2O$ due to air exposure and results in Al corrosion. In this study, the corrosion Phenomena of Al were examined with XPS(X-ray photoelectron spectroscopy) and SEF(Scanning electron microscopy). It was confirmed that chlorine mainly existed at the grain boundary of Al alloy after plasma etching of Al alloy with Cl-based gas chemistry and Al corrosion was largely generated at the grain boundary of Al a1loy. And residual chlorine was passivated by sulfur and fluorine which were generated by SF$_{6}$ plasma. These effects of passivation reduced the Al corrosion due to air exposure.e.