한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

SrTi0$_3$세라믹 캐패시터 박막의 I-V 특성

I-V Characteristics of SrTiO$_3$ Ceramics Capacitor Thin Films.

  • 이우선 (조선대학교 전기공학과) ;
  • 김남오 (조선대학교 전기공학과) ;
  • 정용호 (동신대학교 전기전자공학과) ;
  • 이경섭 (동신대학교 전기전자공학과)
  • 발행 : 1996.11.01
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초록

We fabricated SrTiO$_3$thin film capacitor on the Ag/Si-wafer by RF sputtering deposition. And I-V characteristics and structual analysis of the thin film capacitor are investigated. We found that the leakage current of the films during deposition is strongly denpent on the ambient gas and substrate temperature. Because of increase of activation energy, leakage current increased at high temperature and resistivity of the films was decreased. According to the increase of oxygen gas flow rate, the conductivity of thin film capacitor was increased and leakage current was decreased.

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