한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 1996년도 추계학술대회 논문집
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- Pages.67-70
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- 1996
열 산화막 성장의 스트레스 의존성에 관한 연구
Stress Effect of Thermal Oxidation
초록
In this paper, the three-dimensional stress effect of thermal oxide is simulated. We developed the three-dimensional finite element numerical simulator including three-dimensional adaptive mesh generator that is able to refine and eliminate nearby moving boundary of oxide, and oxidation solver with stress model. The main effect of deformation at the coner area of oxide is due to distribution of oxidant, but the deformation of oxide is affected by the stress in the oxide. In the island structure which is the structure mostly covered with nitride and a coner is opened to oxidation, oxidation is reduced at the coner by compressive stress. In the hole structure which is the structure mostly opened to oxide and a coner is covered with nitride, however, oxidation is increased at the coner by tensile stress.
키워드