Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1996.11a
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- Pages.37-39
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- 1996
Properties of thick-film GaN on sapphire substrates by HVPE method
HVPE 법으로 사파이어 기판 위에 성장한 후막 GaN의 특성
Abstract
A hydride vapor phase epitaxy (HVPE) method was performed to prepare the GaN thick-films on c-plane sapphire substrates. The full-width at half maximum of double crystal X-ray rocking curve from 350
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