Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1996.05a
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- Pages.72-75
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- 1996
Vapor Phase Epitaxial Growth and Properties of GaN
GaN의 기상성장과 특성
Abstract
A hydride vapor phase epitaxy (HVPE) method is performed to prepare the GaN thin films on c-plane sapphire substrate. The full-width at half maximum of double crystal X-ray rocking curves from 20
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