High Electron Mobility in Indium-Rich Pseudomorphic $In_xGa_{1-x}As/In_yAl_{1-y}As/Inp$ HEMT Containing a Linearly-Graded Buffer Structure Grown by MBE

  • 홍상기 (한국전자통신연구소 반도체연구단 재료기술연구실) ;
  • 이해권 (한국전자통신연구소 반도체연구단 재료기술연구실)
  • Published : 1996.02.01