한국결정성장학회:학술대회논문집 (Proceedings of the Korea Association of Crystal Growth Conference)
- 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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- Pages.494-496
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- 1996
Pore Distribution of Porous Silicon layer by Anodization Process
- Lee, Ki-Yong (Process Analysis Lab. Department of Chemical Engineering Korea Advanced Institute of Science and Technology) ;
- Chung, Won-Yong (Process Analysis Lab. Department of Chemical Engineering Korea Advanced Institute of Science and Technology) ;
- Kim, Do-Hyun (Process Analysis Lab. Department of Chemical Engineering Korea Advanced Institute of Science and Technology)
- 발행 : 1996.06.01
초록
The purpose of this study is to investigate the effect of process conditions on pore distribution in porous silicon layer prepared by electrochemical reaction. Porous silicon layers formed on p-type silicon wafer show the network structure of fine porse whose diameters are less than 100