Proceedings of the Korea Association of Crystal Growth Conference (한국결정성장학회:학술대회논문집)
- 1996.06a
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- Pages.494-496
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- 1996
Pore Distribution of Porous Silicon layer by Anodization Process
- Lee, Ki-Yong (Process Analysis Lab. Department of Chemical Engineering Korea Advanced Institute of Science and Technology) ;
- Chung, Won-Yong (Process Analysis Lab. Department of Chemical Engineering Korea Advanced Institute of Science and Technology) ;
- Kim, Do-Hyun (Process Analysis Lab. Department of Chemical Engineering Korea Advanced Institute of Science and Technology)
- Published : 1996.06.01
Abstract
The purpose of this study is to investigate the effect of process conditions on pore distribution in porous silicon layer prepared by electrochemical reaction. Porous silicon layers formed on p-type silicon wafer show the network structure of fine porse whose diameters are less than 100