Real time observation of reconstruction transition on GaAs (111)B vicinal surface by scanning electron microscopy

  • Ren, Hong-Wen (Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-Ku, Tokyo 113, Japan) ;
  • Tatau Nishinaga (Graduate School of Engineering, The University of Tokyo)
  • Published : 1996.06.01

Abstract

Scanning electron microscopy (SEM) has been applied to observe directly the {{{{ SQRT { 19} }}}}${\times}${{{{ SQRT { 19} }}}} and (1${\times}$1)HT reconstructions and the transition associated step bunching on the GaAs (111)B surfaces under As pressure. Close to the transition point, {{{{ SQRT { 19} }}}}${\times}${{{{ SQRT { 19} }}}}an d (1${\times}$1)HT reconstructions are observed in dark and bright domains by SEM and determined by micro-probe reflection high-energy electron diffraction (${\mu}$-RHEED). The reconstruction diagram shows hyster-esis. The stepped surface morphology during the reconstruction transition was unstable. Heavy step bunching with rough macrostep edges was observed.

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